Image sensor and method for fabricating same

ABSTRACT

An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present invention claims priority of Korean patent applicationnumber 10-2007-0074105, filed on Jul. 24, 2007, which is incorporated byreference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor fabrication technology,and in particular, to an image sensor and a method for fabricating thesame, and more particularly, to a complementarymetal-oxide-semiconductor (CMOS) image sensor and a method forfabricating the same.

With development of image communication using the internet, demand ofdigital cameras is explosively increasing. Further, with increase indistribution of mobile communication terminals with built-in camera,such as personal digital assistant (PDA), International MobileTelecommunications-2000 (IMT-2000), and code division multiple access(CDMA) terminals, demand of small camera modules is increasing.

As camera modules, a charge coupled device (CCD) and a CMOS image sensorare widely used. A CCD has a complicated driving scheme and high powerconsumption. In addition, a CCD requires a large number of maskprocesses and the processes are complicated. Furthermore, a signalprocessor circuit cannot be implemented within a chip, so that it isdifficult to realize one-chip. A CMOS image sensor includes a photodiodeand a MOS transistor in a unit pixel and reproduces an image bydetecting signals sequentially in a switching manner. Since the CMOSimage sensor uses a CMOS fabrication technology, the CMOS image sensorhas low power consumption and requires approximately 20 masks so thatits process is much simpler than the CCD process which requiresapproximately 30 masks to approximately 40 masks. Since the CMOS imagesensor can be realized in one-chip with several signal processorcircuits, it is considered as a next-generation image sensor.

Recently, higher density pixels are required to ensure competitivenessof CMOS image sensors. In order to implement high density pixels, thepixel size must be reduced. However, if the pixel size is reduced, thesize of the photodiode is relatively reduced, and a fill factor, whichis defined as an area occupied by the photodiode in a total pixel area,is reduced. If the size of the photodiode is reduced, a full wellcapacity, which is the number of signal charges one pixel can maintain,is also reduced and device characteristics are degraded. Thus, the areaof the photodiode cannot be reduced without limitation.

Accordingly, as an effort to ensure the maximum well capacity within afinite area, there has been proposed a method that increases the area ofthe photodiode and decreases an interval of photodiodes, that is, aninterval of adjacent pixels. However, the reduction in the interval ofthe photodiodes causes serious degradation in quantum efficiency (QE)and crosstalk characteristic of the image sensor, thereby leading todegradation in device characteristics.

As an effort to prevent the degradation of crosstalk characteristics,there have been proposed a method that decreases the thickness of aepi-layer, and a method that separates the interval of the adjacentphotodiodes by implanting impurity ions between the photodiodes. In thecase of the former, the degradation of the quantum efficiency becomesmore serious and, in the case of the latter, the width of the photodiodeis relatively reduced, thereby causing the additional reduction of themaximum well capacity.

Conventionally, there have been proposed the above methods for reducingthe inter-pixel crosstalk caused by diffusion of minority carriers,which are main factors of electrical crosstalk, but it can be seen thatdegradation of other main characteristics is caused.

Meanwhile, as the pixel size is reduced, it is required to additionallyensure the maximum well capacity. In order to increase the maximum wellcapacity in the finite photodiode region while maintaining a chargetransfer characteristic, the photodiode is fabricated by performing anion implantation process using low ion implantation energy. This isbecause the maximum potential depth within the photodiode is inverselyproportional to the well capacity.

Therefore, in order to obtain a signal to noise ratio (SNR) and dynamicrange meeting a level required in a small-sized photodiode, the ionimplantation energy in the ion implantation process for fabricating thephotodiode tends to be relatively lowered. However, these methods reducethe depletion region of the photodiode, causing the additionaldegradation in the quantum efficiency and crosstalk characteristic.

SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to providing an imagesensor, which is capable of improving quantum efficiency and electricalcrosstalk characteristic by increasing a depletion region of aphotodiode, and a method for fabricating the same.

In accordance with a first aspect of the present invention, there isprovided an image sensor. The image sensor includes an epi-layer of afirst conductivity type formed in a substrate, a photodiode formed inthe epi-layer, and a first doping region of a second conductivity typeformed under the photodiode to separate the first doping region from thephotodiode.

In accordance with a second aspect of the present invention, there isprovided a method for fabricating an image sensor. The method includesforming an isolation layer over a substrate having an epi-layer of afirst conductivity type, forming a gate electrode over the substrate,forming a first doping region of a second conductivity type in theepi-layer exposed to one side of the gate electrode, and forming aphotodiode over the first doping region to separate the photodiode fromthe first doping region.

In accordance with a third aspect of the present invention, there isprovided a method for fabricating an image sensor. The method includesforming an isolation layer over a substrate having an epi-layer of afirst conductivity type, forming a first doping region of a secondconductivity type in the epi-layer, forming a gate electrode over thesubstrate, and forming a photodiode over the first doping region exposedto one side of the gate electrode to separate the photodiode from thefirst doping region.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of an image sensor inaccordance with an embodiment of the present invention.

FIGS. 2A to 2B illustrate distribution of a depletion region of aphotodiode and an electrostatic potential, after a transfer transistoris

FIGS. 3A and 3B illustrate a simulation result for comparing the relatedart with the present invention in an electrical crosstalk and responsecharacteristic.

FIGS. 4A to 4D illustrate cross-sectional views of a method forfabricating an image sensor in accordance with an embodiment of thepresent invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

Hereinafter, an image sensor and a method for fabricating the same inaccordance with the present invention will be described in detail withreference to the accompanying drawings. In the drawings, the thicknessesof layers and regions are exaggerated for clarity. It will also beunderstood that when a layer is referred to as being “on” another layeror substrate, it can be directly on the other layer or substrate, orintervening layers may also be present. Also, like reference numeralsrefer to like elements throughout the drawings. Furthermore, a firstconductivity and a second conductivity described herein means differentconductivity types, for example, a p-type and an n-type.

FIG. 1 illustrates a cross-sectional view of an image sensor inaccordance with an embodiment of the present invention. For convenience,only a photodiode PD and a gate electrode of a transfer transistor T_(X)in a unit pixel of a complementary metal-oxide-semiconductor (CMOS)image sensor are illustrated.

Referring to FIG. 1, the image sensor in accordance with the embodimentof the present invention includes a first doping region 106 of a secondconductivity type (for example, n-type), which is formed in an epi-layer101 having a first conductivity type (for example, p-type) under aphotodiode PD, so that the first doping region 106 is separated from thephotodiode PD.

The first doping region 106 is formed not to be overlapped with thetransfer transistor T_(X) or to be separated far away from the transfertransistor T_(X) so as not to influence charge transfer characteristics.In order to increase a depletion region of the photodiode PD uponoperation of the transfer transistor T_(X), the first doping region 106is formed only under the photodiode PD in an island shape. The firstdoping region 106 is formed with the same conductivity type (forexample, n-type) as the second doping region 107 of the photodiode PD atlow doping concentration.

In the image sensor in accordance with the embodiment of the presentinvention, by forming the first doping region 106 having a lowerconcentration than the second doping region 107 under the photodiode, awide depletion region can be ensured, while not affecting the opticalcharacteristic of the image sensor. Thus, it is possible to improve boththe quantum efficiency and electrical crosstalk characteristic of thesmall-sized image sensor.

FIGS. 2A and 2B illustrate distribution of the depletion region of thephotodiode PD and an electrostatic potential, after a transfertransistor is turned on, according to the related art and the presentinvention, respectively. Simulation conditions of FIGS. 2A and 2B are alow illumination state, and the low illumination transfercharacteristics of the related art and the present invention arecompared.

Referring to FIGS. 2A and 2B, the electrostatic potential distributionof the present invention is similar to that of the related art under thetransfer transistor T_(X). This means that the charge transfercharacteristics in the related art and the present invention are similarto each other. That is, it can be construed that the first doping region106 (see FIG. 1) of the present invention does not greatly affect thecharge transfer characteristic. In addition, it can be seen that theelectrostatic potential distribution of the present invention isexpanded in a depth direction under the photodiode PD, compared with theelectrostatic potential distribution of the related art. This means thatthe depletion region of the photodiode PD in accordance with the presentinvention is greatly increased compared with the related art. Inaccordance with the embodiment of the present invention, the firstdoping region 106 expands the depletion region of the photodiode PD inthe depth direction, while not almost affecting the well capacity,thereby improving the quantum efficiency.

FIGS. 3A and 3B illustrate a simulation result for comparing the relatedart with the present invention in an electrical crosstalk and responsecharacteristic. Specifically, FIG. 3A is a graph for comparing variationof an electrical crosstalk (Y-axis, E-Xtalk) with respect to awavelength (X-axis) of incident light, and FIG. 3B is a graph forcomparing variation of a photocurrent (Y-axis) with respect to awavelength (X-axis) of incident light.

Referring to FIG. 3A, compared with the related art, the electricalcrosstalk is remarkably improved in the same wavelength band of theincident light. As described above, the main factor of the electricalcrosstalk is the thermal diffusion of minority carriers, and such anelectrical crosstalk increases as the wavelength is longer. Mostminority carriers are derived from electrons generated in a neutralregion of the epi-layer which is dominant. Like in the presentinvention, the minority carriers expand the depletion region of thephotodiode in the depth direction, and absorb electrons, which aregenerated in the neutral region, in the depletion region having 100%internal quantum efficiency, thereby minimizing the influence ofcrosstalk caused by the thermal diffusion of the minority carrierswithin the adjacent pixels.

Referring to FIG. 3B, compared with the related art, the photocurrent isremarkably increased in the same wavelength band of the incident light,especially the high wavelength band of approximately 500 nm or more.This means the increase of a charge collection efficiency representinghow many electrons generated by photon exposure are maintained withinthe corresponding pixel. The increase of the charge collectionefficiency improves the responsivity defined as amount of a signaltransferred by the sensor per unit of an input optical energy.

A method for fabricating an image sensor in accordance with anembodiment of the present invention in FIG. 1 will be described below.

FIGS. 4A to 4D illustrate cross-sectional views of a method forfabricating an image sensor in accordance with an embodiment of thepresent invention.

Referring to FIG. 4A, an epi-layer 101 doped with a first conductivitytype (for example, p-type) is formed on a substrate 100, for example, asilicon substrate heavily doped with the first conductivity type. Inthis case, the epi-layer 101 is doped with a lower concentration thanthe substrate 100.

An isolation layer 102 is locally formed in the substrate 100. Theisolation layer 102 may be formed by a shallow trench isolation (STI)process or a local oxidation of silicon (LOCOS) process. In this case,as illustrated in FIG. 4A, the STI process is advantageous to highintegration density. In the case where the STI process is applied, theisolation layer 102 may include a high density plasma (HDP) layer, whichhas an excellent a gap-fill characteristic even in a high aspect ratio,or a stacked structure of an HDP layer and a spin on dielectric (SOD)layer.

A gate insulation layer 103 and a gate conductive layer 104 are formedon the substrate 100 and are etched to form a gate electrode 105 of atransfer transistor.

Referring to FIG. 4B, a first doping region 106 is formed in theepi-layer 101 by using an ion implantation mask (not shown) for formingthe photodiode through a subsequent process. The first doping region 106is formed under the photodiode in an island shape by performing an ionimplantation process at a relatively high ion implantation energy sothat the first doping region 106 can be separated from the photodiode.In addition, the first doping region 106 is formed with the sameconductivity type (for example, n-type) as a second doping region (107,see FIG. 4C) of the photodiode at a low doping concentration. Forexample, the first doping region 106 is formed using phosphine (PH₃) atan ion implantation energy of at least 500 KeV or more, preferablyapproximately 500 KeV to approximately 1.5 MeV, with a dose ofapproximately 5×10¹¹ ions/cm², preferably approximately 1×10⁹ ions/cm²to approximately 5×10¹¹ ions/cm².

Referring to FIG. 4C, a second doping region 107 of the photodiode isformed using the ion implantation mask that is used in the process offorming the first doping region 106 in FIG. 4B. The second doping region107 is formed with the same conductivity type as the first doping region106 but at a high doping concentration. In addition, one side of thesecond doping region 107 is formed in alignment with the gate electrode105 of the transfer transistor, and it is separated from the firstdoping region 106.

Referring to FIG. 4D, spacers 108 may be formed on both sidewalls of thegate electrode 105. In this case, the spacers 108 may include an oxidelayer or a stacked structure of an oxide layer and a nitride layer. Forexample, the spacers 108 include a single-layered structure or stackedstructure of a silicon oxide (SiO₂) layer, a silicon nitride (Si₃N₄)layer, and a silicon oxynitride (SiON).

A third doping region 109 may be formed on the second doping region 107.In this case, the third doping region 109 is formed in alignment withthe spacers 108. Also, the third doping region 109 is formed with aconductivity type opposite to the second doping region 107, that is, thefirst conductivity type. The third doping region 109 constitutes apinned photodiode together with the second doping region 107 to suppressa dark current.

Meanwhile, the third doping region 109 may be formed by performing anion implantation process two times before the formation of the spacers108. In this case, before the formation of the spacers 108, the primaryion implantation process is performed so that the third doping region109 is aligned with one side of the gate electrode 105 and, after theformation of the spacers 108, the secondary ion implantation process isperformed so that the third doping region 109 is aligned with one sideof the spacers 108 at a higher concentration than the first ionimplantation process.

A fourth doping region 110 is formed as a floating diffusion regionwithin the epi-layer 101 exposed toward the other side of the gateelectrode 105 of the transfer transistor, that is, the opposite side ofthe photodiode. The fourth doping region 110 is formed with the secondconductivity type at a higher concentration than the second dopingregion 107. Since the sequent processes are identical to the generalprocesses, their detailed description will be omitted.

The image sensor in accordance with the present invention can obtain thefollowing effects.

First, by forming the doping region doped with a low concentration underthe photodiode, a wide depletion region can be ensured, while notaffecting the optical characteristic of the image sensor. Thus, it ispossible to improve both the quantum efficiency and electrical crosstalkcharacteristic of the image sensor.

Second, by forming the doping region doped with a low concentrationunder the photodiode, without additional mask process, the increase ofturn around time (TAT) and fabrication cost can be minimized.

While the present invention has been described in detail with respect tothe specific embodiments, it should be noted that these embodiments aremerely only for illustrative purposes and will not be construed aslimiting the present invention. In particular, although it has beendescribed above that the first doping region 106 is formed after thegate electrode 105 of the transfer transistor is formed, it may also beformed before the gate electrode 105 is formed. For example, the firstdoping region 106 may be formed after forming the isolation layer 102before forming the gate insulation layer 103. Alternatively, the firstdoping region 106 may be formed before forming the isolation layer 102after forming the epi-layer 101. Furthermore, the first doping region106 may be formed by a blanket ion implantation process without any ionimplantation mask. Moreover, it will be apparent to those skilled in theart that various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

1. A method for fabricating an image sensor, the method comprising:forming a first doping region within an epitaxial layer; and forming asecond doping region within a location of the epitaxial layer for aphotodiode; wherein the first doping region is located below andseparated from the second doping region; wherein the epitaxial layerincludes a first conductivity type; wherein the first doping region andthe second doping region include a second conductivity type; and whereina doping concentration of the first doping region is lower than a dopingconcentration of the second doping region.
 2. The method of claim 1,wherein said forming a first doping region is performed before saidforming a second doping region.
 3. The method of claim 1, wherein: saidforming a first doping region comprises using an ion implantation mask;and said forming a second doping region comprises using the same ionimplantation mask.
 4. The method of claim 1, wherein said forming afirst doping region comprises implanting ions into the epitaxial layer.5. The method of claim 4, wherein said implanting ions comprisesimplanting phosphine ions at an energy of at least 500 KeV.
 6. Themethod of claim 4, wherein said implanting ions comprises implantingphosphine ions at an energy between approximately 500 KeV toapproximately 1.5 MeV.
 7. The method of claim 6, wherein said implantingions comprises implanting phosphine ions at a dose of betweenapproximately 1×10⁹ ions/cm² to approximately 5×10¹¹ ions/cm².
 8. Amethod for fabricating an image sensor, the method comprising: forming afirst doping region within an epitaxial layer; and forming a photodiodein the epitaxial layer; wherein the first doping region is located belowand separated from the photodiode; wherein the epitaxial layer includesa first conductivity type; wherein the first doping region includes asecond conductivity type; and wherein the first doping region extends adepletion region of the photodiode.
 9. The method of claim 8, wherein:said forming a photodiode comprises forming a second doping region; thesecond doping region includes the second conductivity type; and a dopingconcentration of the first doping region is lower than a dopingconcentration of the second doping region.
 10. The method of claim 9,wherein: said forming a first doping region comprises using an ionimplantation mask; and said forming a second doping region comprisesusing the same ion implantation mask.
 11. The method of claim 8, whereinsaid forming a first doping region comprises implanting ions into theepitaxial layer.
 12. The method of claim 11, wherein said implantingions comprises implanting phosphine ions at an energy of at least 500KeV.
 13. The method of claim 11, wherein said implanting ions comprisesimplanting phosphine ions at an energy between approximately 500 KeV toapproximately 1.5 MeV.
 14. The method of claim 13, wherein saidimplanting ions comprises implanting phosphine ions at a dose of betweenapproximately 1×10⁹ ions/cm² to approximately 5×10¹¹ ions/cm².
 15. Amethod for fabricating an image sensor, the method comprising: forming afirst doping region within an epitaxial layer; and forming, in theepitaxial layer, a photodiode including a second doping region; whereinthe first doping region is located below and separated from thephotodiode; wherein the epitaxial layer includes a first conductivitytype; wherein the first doping region includes a second conductivitytype; and wherein the first doping region extends a depletion region ofthe photodiode.
 16. The method of claim 15, wherein said forming a firstdoping region is performed before said forming a photodiode.
 17. Themethod of claim 15, wherein: said forming a first doping regioncomprises using an ion implantation mask; and said forming a photodiodecomprises using the same ion implantation mask to form the second dopingregion.
 18. The method of claim 15, wherein said forming a first dopingregion comprises implanting phosphine ions into the epitaxial layer atan energy of at least 500 KeV.
 19. The method of claim 15, wherein saidforming a first doping region comprises implanting phosphine ions intothe epitaxial layer at an energy between approximately 500 KeV toapproximately 1.5 MeV.
 20. The method of claim 19, wherein saidimplanting phosphine ions comprises implanting phosphine ions at a doseof between approximately 1×10⁹ ions/cm² to approximately 5×10¹¹ions/cm².